053-4229 rev d 5-2011 product benefits low losses low noise switching cooler operation higher reliability systems increased system power density product features ultrafast recovery times soft recovery characteristics popular to-247 package or surface mount d 3 pak package low forward voltage low leakage current avalanche energy rated product applications anti-parallel diode -switchmode power supply -inverters free wheeling diode -motor controllers -converters -inverters snubber diode pfc ultrafast soft recovery rectifier diode 1200v 75a apt75dq120b apt75dq120s APT75DQ120BG* apt75dq120sg* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.8 3.3 3.48 2.17 100 500 50 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 75a i f = 150a i f = 75a, t j = 125c v r = 1200v v r = 1200v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 113c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range lead temperature for 10 sec. symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg t l unit volts amps mj c apt75dq120b_s(g) 1200 75 121540 20 -55 to 175 300 1 - cathode 2 - anode back of case - cathode 1 2 t o - 2 4 7 1 2 d 3 pak 1 2 (s) (b) microsemi website - http://www.microsemi.com downloaded from: http:///
apt75dq120b_s(g) dynamic characteristics 053-4229 rev d 5-2011 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: min typ max - 32 - 325 - 715 - 5 - - 420 - 3340 - 13 - - 195 - 5810 - 42 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 75a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 75a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 75a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max .31 0.22 5.9 10 1.1 unit c/w oz g lbin nm d = 0.9 microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
053-4229 rev d 5-2011 apt75dq120b_s(g) typical performance curves t j = 125 c v r = 800v t rr q rr q rr t rr i rrm 500400 300 200 100 0 5040 30 20 10 0 duty cycle = 0.5 t j = 175 c 140120 100 8060 40 20 0 1.21.0 0.8 0.6 0.4 0.2 0.0 350300 250 200 150 100 50 0 200180 160 140 120 100 8060 40 20 0 80007000 6000 5000 4000 3000 2000 1000 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 800v t j = 125 c v r = 800v 0 1.0 2.0 3.0 4.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 37.5a 75a 150a 150a 37.5a 75a 150a 75a 37.5a t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 downloaded from: http:///
apt75dq120b_s(g) 053-4229 rev d 5-2011 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform apt10035lll 15.85 (.624)16.05(.632) 18.70 (.736)19.10 (.752) 1.15 (.045)1.45 (.057) 5.45 (.215) bsc (2 plcs. ) 4.90 (.193)5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106)2.90 (.114) 0.40 (.016)0.65 (.026) dimensions in millimeters (inches ) heat sink (cathode)and leads are plated 2.40 (.094)2.70 (.106) (base of lead) cathode(heat sink) 1.90 (.075)2.10 (.083) cathode anode 0.020 (.001)0.250 (.010) 1.20 (.047)1.40 (.055) 12.40 (.488)12.70 (.500) 13.30 (.524)13.60(.535) 1.00 (.039)1.15(.045) 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max . 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 10.90 (.430) bsc 3.50 (.138)3.81 (.150) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) dimensions in millimeters and (inches ) cathode anode cathode e1 sac: tin, silver, copper e3 100% sn 1.016 (.040) to-247 package outline d 3 pak package outline figure 10. diode reverse recovery waveform de? nition 5 1 2 3 4 i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. figure 9. diode test circuit downloaded from: http:///
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